Cite
HARVARD Citation
Guo, H. et al. (2020). Effects of vacancy defects on electronic properties of 2D group-IV Tellurides (XTe, X = Si, Ge, Sn and Pb). Superlattices and microstructures. p. . [Online].
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Guo, H. et al. (2020). Effects of vacancy defects on electronic properties of 2D group-IV Tellurides (XTe, X = Si, Ge, Sn and Pb). Superlattices and microstructures. p. . [Online].