Cite
HARVARD Citation
Lee, T. et al. (2020). Analysis of fluorine effects on charge-trap flash memory of W/TiN/Al2O3/Si3N4/SiO2/poly-Si gate stack. Solid-state electronics. p. . [Online].
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Lee, T. et al. (2020). Analysis of fluorine effects on charge-trap flash memory of W/TiN/Al2O3/Si3N4/SiO2/poly-Si gate stack. Solid-state electronics. p. . [Online].