Graphene Optoelectronics: Atomic‐Scale Spectroscopic Imaging of the Extreme‐UV Optical Response of B‐ and N‐Doped Graphene (Adv. Funct. Mater. 52/2019). (23rd December 2019)

• Record Type: Journal Article
• Authors: Hage, Fredrik S.; Kapetanakis, Myron D.; Idrobo, Juan‐Carlos; Ramasse, Quentin M.; Kepaptsoglou, Demie
• Is Part Of: Advanced functional materials. Volume 29:Number 52(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-12-23
• Subjects: density functional theory -- doping -- electron energy loss spectroscopy -- graphene -- scanning transmission electron microscopy; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201970356
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract : In article number 1901819, Myron D. Kapetanakis, Quentin M. Ramasse, Demie Kepaptsoglou, and co‐workers use advanced electron energy loss spectroscopy to probe the plasmonic and optical response of nitrogen‐ and boron‐doped graphene at the atomic scale. Single atom dopants in graphene can be manipulated to engineer localised optoelectronic properties, which can be mapped experimentally and understood through theoretical calculations based on density functional theory.