Exploitation of Bi2O2Se/graphene van der Waals heterojunction for creating efficient photodetectors and short‐channel field‐effect transistors. Issue 3 (11th August 2019)

• Record Type: Journal Article
• Authors: Tan, Congwei; Xu, Shipu; Tan, Zhenjun; Sun, Luzhao; Wu, Jinxiong; Li, Tianran; Peng, Hailin
• Is Part Of: InfoMat. Volume 1:Issue 3(2019:Sep.)
• Page Start: 390
• Page End: 395
• Publication Date: 2019-08-11
• Subjects: Bi2O2Se -- graphene -- van der Waals heterojunctions; Materials -- Periodicals; Information technology -- Periodicals; Smart materials -- Periodicals; 620.11
• DOI: 10.1002/inf2.12025
• Languages: English
• ISSNs: 2567-3165

Abstract

Abstract: The formation of heterojunction within solid‐state devices enables them with eventually high performances, but provides a challenge for material synthesis and device fabrication because strict conditions such as lattice match are needed. Herein, we show a facile method to fabricate a van der Waals (vdW) heterojunction between two‐dimensional (2D) bismuth oxyselenide (Bi2 O2 Se) and graphene, during which the graphene is directly transferred to the Bi2 O2 Se and served as a low‐contract‐resistant electrode with small work function mismatch (~50 meV). As an optoelectronic device, the Bi2 O2 Se/graphene vdW heterojunction allows for the efficient sensing toward 1200‐nm incident laser. Regarding the application of field‐effect transistors (FETs), the short‐channel (50 nm) sample can be synthesized by utilizing these two 2D materials (ie, channel: Bi2 O2 Se; drain/source terminal: graphene) and the n‐type characteristic can be observed with the accordant field modulation. It is confirmed that we show a simple way to prepare the vdW heterojunction which is aiming to the high‐performance applications among optoelectronics and FETs. Abstract : This work presents a facile method to fabricate a van der Waals heterojunction between two‐dimensional bismuth oxyselenide and graphene, by which as‐prepared photodetector can sensitively sense the 1200 nm incident laser and the 50‐nm short‐channel field effect transistor is obtained with the n‐type characteristic and the accordant field modulation.