Itinerant Semiconducting Antiferromagnetism in Metastable V3Ga. Issue 12 (1st October 2019)

• Record Type: Journal Article
• Authors: He, Bin; Bao, Zhidi; Zhu, Kun; Feng, Wuwei; Sun, Hua; Pang, Ning; Tsogbadrakh, Namsrai; Odkhuu, Dorj
• Is Part Of: Physica status solidi. Volume 13:Issue 12(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-10-01
• Subjects: V3Ga -- antiferromagnetism -- alternating evaporation; Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201900483
• Languages: English
• ISSNs: 1862-6254

Abstract

Abstract : Herein, a metastable phase of β‐W type V3 Ga is identified to exhibit an itinerant semiconducting antiferromagnetism. Density functional theory plus Hubbard U (DFT+U) calculations predict the β‐W type structure as a possible metastable phase, although energetically less favorable than the previously known D03 phase, which is successfully synthesized with good crystallinity by alternating evaporation method with postannealing process rather than traditional coevaporation method. Such a metastable β‐W phase results in an antiferromagnetic (AFM) order up to at least 500 K and highly conductive semiconducting behavior. The antiferromagnetism in the β‐W type V3 Ga can be understood in terms of strong Coulomb repulsion and Hund's rule coupling between the nearest neighbor V 3d orbital states and their covalent bonding with the Ga 4p orbitals. These results are further verified by an exchange bias phenomenon revealed in antiferro/ferromagnet hybrid heterostructure of V3 Ga and Fe films, where the strong hybridization between Fe 3d and V 3d orbital states at the interface gives rise to the robust perpendicular magnetic anisotropy therein. Herein, a novel route is used to prepare an AFM semiconductor material for antiferromagnet spintronics. Abstract : A metastable phase of V3 Ga Heusler compound film can be stabilized by a specific growth procedure due to strong on‐site Coulomb repulsion and strong covalent bonding which take place simultaneously. It exhibits antiferromagnetic nature with high Néel temperature above room temperature. Such a behavior will be ideal for many applications.