A Fully Printed Flexible MoS2 Memristive Artificial Synapse with Femtojoule Switching Energy. (19th September 2019)

• Record Type: Journal Article
• Authors: Feng, Xuewei; Li, Yida; Wang, Lin; Chen, Shuai; Yu, Zhi Gen; Tan, Wee Chong; Macadam, Nasiruddin; Hu, Guohua; Huang, Li; Chen, Li; Gong, Xiao; Chi, Dongzhi; Hasan, Tawfique; Thean, Aaron Voon‐Yew; Zhang, Yong‐Wei; Ang, Kah‐Wee
• Is Part Of: Advanced Electronic Materials. Volume 5:Number 12(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-09-19
• Subjects: artificial synapse -- ink formulation -- memristor -- molybdenum disulfide -- printing; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201900740
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract: Realization of memristors capable of storing and processing data on flexible substrates is a key enabling technology toward "system‐on‐plastics". Recent advancements in printing techniques show enormous potential to overcome the major challenges of the current manufacturing processes that require high temperature and planar topography, which may radically change the system integration approach on flexible substrates. However, fully printed memristors are yet to be successfully demonstrated due to the lack of a robust printable switching medium and a reliable printing process. An aerosol‐jet‐printed Ag/MoS2 /Ag memristor is realized in a cross‐bar structure by developing a scalable and low temperature printing technique utilizing a functional molybdenum disulfide (MoS2 ) ink platform. The fully printed devices exhibit an ultra‐low switching voltage (0.18 V), a high switching ratio (10 7 ), a wide range of tuneable resistance states (10–10 10 Ω) for multi‐bit data storage, and a low standby power consumption of 1 fW and a switching energy of 4.5 fJ per transition set. Moreover, the MoS2 memristor exhibits both volatile and non‐volatile resistive switching behavior by controlling the current compliance levels, which efficiently mimic the short‐term and long‐term plasticity of biological synapses, demonstrating its potential to enable energy‐efficient artificial neuromorphic computing. Abstract : A fully printed flexible MoS2 memristor is realized by aerosol‐jet printing technology utilizing a functional MoS2 ink platform. The device achieves an ultra‐low switching energy of 4.5 fJ per transition. Moreover, the MoS2 memristor exhibits both volatile and non‐volatile resistive switching behavior by controlling the current compliance levels, which efficiently mimic the short‐term and long‐term plasticity of biological synapses.