Dual‐Functional Nonvolatile and Volatile Memory in Resistively Switching Indium Tin Oxide/HfOx Devices. Issue 23 (18th October 2019)

• Record Type: Journal Article
• Authors: Li, Wenxi; Wang, Fang; Zhang, Jingwei; Li, Chuang; Wei, Junqing; Shen, Jiaqiang; Shan, Xin; Ren, Tianling; Zhao, Jinshi; Song, Zhitang; Zhang, Kailiang
• Is Part Of: Physica status solidi. Volume 216:Issue 23(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-10-18
• Subjects: HfOx -- nonvolatile memory switching -- self-compliance -- volatile threshold switching; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201900555
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : Herein, dual‐functional nonvolatile and volatile memory occurrence in memristor based on oxide heterostructures is shown. The chemical composition of material is investigated and electrical measurements are performed to indicate the resistive switching stability under consecutive voltage sweep. The device shows robust nonvolatile memory switching (greater than 10 5 sweep cycles) and self‐compliant volatile threshold switching (approximately 10 5 nonlinearity) functions. Moreover, the underlying mechanism of the phenomenon is investigated to uncover how the two resistive switching modes happen. This work can provide a reference toward the design of dual‐functional memristors based on oxide heterostructures. Abstract : Dual‐functional nonvolatile and volatile resistive memories is produced. The devices demonstrates robust nonvolatile memory switching and self‐compliant volatile threshold switching functions. A unified switching model is drawn according to the conductive filaments state under the combined action of the electric field and Joule heat. This work can provide a reference toward the design of dual‐functional memristors.