Investigate the Nb doping position and its relationship with bulk topological superconductivity in NbxBi2Se3 by X-ray photoelectron spectra. (February 2020)

• Record Type: Journal Article
• Authors: Wang, Jingfeng; Jiao, Fei; Zhang, Di; Chang, Meixia; Cai, Lingbo; Li, Yunlong; Wang, Cao; Tan, Shugang; Jing, Qiang; Liu, Bo; Qian, Dong
• Is Part Of: Journal of physics and chemistry of solids. Volume 137(2020)
• Publication Date: 2020-02
• Subjects: NbxBi2Se3 -- Topological superconductivity -- XPS -- Van der Waals layer doping; Solids -- Periodicals; Solides -- Périodiques; Solids; Periodicals; 530.41
• DOI: 10.1016/j.jpcs.2019.109208
• Languages: English
• ISSNs: 0022-3697

Abstract

Abstract: The relationship between the doping position of Nb in Bi2 Se3 and its superconductivity is investigated by XPS, magnetic measurement and transport measurement. It is found that for Nbx Bi2 Se3, the main impurity phase comes from BiNbSe3 . Superconducting volume fraction of Nb doped Bi2 Se3 increases with the ratio of Nb inserted in the van der Waals layers. The van der Waals-layer-position doped Nb may lead to superconductivity in Bi2 Se3 . This work may stimulate further investigation on topological superconductivity mechanism of Nbx Bi2 Se3 . Highlights: The van der Waals-layer-position doped Nb may lead to superconductivity in Bi2Se3. Superconducting volume fraction of Nb doped Bi2Se3 increases with the ratio of Nb inserted in the van der Waals layers. For bulk topological superconductivity NbxBi2Se3, the main impurity phase comes from BiNbSe3.