Integration of MoS2 with InAlAs/InGaAs Heterojunction for Dual Color Detection in Both Visible and Near‐Infrared Bands. Issue 23 (10th September 2019)

• Record Type: Journal Article
• Authors: Deng, Jianan; Zong, Lingyi; Bao, Wenzhong; Zhu, Mingsai; Liao, Fuyou; Guo, Zhongxun; Xie, Yuying; Lu, Bingrui; Wan, Jing; Zhu, Jiahe; Peng, Ruwen; Chen, Yifang
• Is Part Of: Advanced optical materials. Volume 7:Issue 23(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-09-10
• Subjects: 2D electron gas -- dual‐band photodetection -- gate‐tunable negative/positive responsivity -- MoS2/InAlAs/InGaAs van der Waals heterojunction; Optical materials -- Periodicals; Photonics -- Periodicals; 620.11295
• DOI: 10.1002/adom.201901039
• Languages: English
• ISSNs: 2195-1071

Abstract

Abstract: At present, dual‐channel or even multi‐channel recording is a developing trend in the field of photodetection, which is widely applied in environment protection, security, and space science and technology. This paper proposes a novel MoS2 /InAlAs/InGaAs n–i–n heterojunction phototransistor by integrating multi‐layered MoS2 with InGaAs‐based high electron mobility transistors (InGaAs‐HEMTs). Due to the internal photocurrent amplification in the InGaAs channels with a narrow energy bandgap of 0.79 eV, this device exhibits high photoresponsivity ( R ) of over 8 × 10 5 A W –1 under near‐infrared illumination of 1550 nm at 500 pW. Furthermore, with the combination of the photoconductance effect in the vertical MoS2 /InAlAs/InGaAs n–i–n heterojunction and the photogating effect in the lateral phototransistor, this device possesses a unique characteristic under visible illumination that its photoresponsivity can be tuned by the top gate electrode from 6 × 10 5 A W –1 to ‐4 × 10 5 A W –1 by gate voltage. This may lead to a new application as an optically controlled electronic inverter, which needs further study in depth. This MoS2 /InAlAs/InGaAs phototransistor builds up a new bridge between 2D materials and conventional ternary compounded semiconductor devices. Abstract : Here, a novel MoS2 /InAlAs/InGaAs n‐i‐n heterojunction phototransistor is proposed by integrating multilayered MoS2 with InGaAs‐based high electron mobility transistors with high photoresponsivity in both visible and near‐infrared illumination. This MoS2 /InAlAs/InGaAs phototransistor builds up a new bridge between 2D materials and conventional ternary compounded semiconductor devices.