TMD‐Based Phototransistors: Anomalous Broadband Spectrum Photodetection in 2D Rhenium Disulfide Transistor (Advanced Optical Materials 23/2019). Issue 23 (3rd December 2019)

• Record Type: Journal Article
• Authors: Xiang, Du; Liu, Tao; Wang, Junyong; Wang, Peng; Wang, Lin; Zheng, Yue; Wang, Yanan; Gao, Jing; Ang, Kah‐Wee; Eda, Goki; Hu, Weida; Liu, Lei; Chen, Wei
• Is Part Of: Advanced optical materials. Volume 7:Issue 23(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-12-03
• Subjects: 2D ReS2 transistors -- bolometric modes -- low noise equivalent power, fast photoresponse -- photocurrent polarity switching -- sub‐bandgap photodetection; Optical materials -- Periodicals; Photonics -- Periodicals; 620.11295
• DOI: 10.1002/adom.201970088
• Languages: English
• ISSNs: 2195-1071

Abstract

Abstract : In article number 1901115, Du Xiang and co‐workers report the photodetection in 2D multilayer ReS2 transistor via bolometric mode, which relies on light heating induced conductance change, making it feasible for sub‐bandgap photon detection. The findings would extend the response spectrum of large‐bandgap transition metal dichalcogenides for broadband photodetectors.