Growth of Nanocrystalline MoSe2 Monolayers on Epitaxial Graphene from Amorphous Precursors (Phys. Status Solidi B 2/2019). Issue 2 (15th February 2019)

• Record Type: Journal Article
• Authors: Göhler, Fabian; Hadland, Erik C.; Schmidt, Constance; Zahn, Dietrich R. T.; Speck, Florian; Johnson, David C.; Seyller, Thomas
• Other Names: Salvan Georgeta guestEditor.; Dzhagan Volodymyr guestEditor.; Vogt Patrick guestEditor.; Seyller Thomas guestEditor.
• Is Part Of: Physica status solidi. Volume 256:Issue 2(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-02-15
• Subjects: Solid state physics -- Periodicals; Solids -- Periodicals; Atomic structure -- Periodicals; 530.41
• DOI: 10.1002/pssb.201970015
• Languages: English
• ISSNs: 0370-1972

Abstract

Abstract : On the back cover a new approach to grow monolayers of MoSe2 is illustrated. In a first step, an amorphous precursor is deposited on a substrate, in this case epitaxial graphene on silicon carbide. In a second step, nano‐crystalline MoS2 in randomly oriented domains self‐assembles upon annealing. Films with a thickness of one monolayer were successfully grown, as was demonstrated by characterization using a variety of techniques. This approach opens up an avenue to synthesize a number of new van‐der‐Waals systems on epitaxial graphene and other substrates. Further details can be found in article number 1800283 by Fabian Göhler et al.