Formation and characterization of high-performance silicon thin-film transistors with and without location-controlled grain boundary. (12th September 2017)

• Record Type: Journal Article
• Authors: Liao, Chan-Yu; Lin, Hsiao-Chun; Wang, Chao-Lung; Lee, I-Che; Chou, Chia-Hsin; Li, Yu-Ren; Cheng, Huang-Chung
• Is Part Of: Journal of micromechanics and microengineering. Volume 27:Number 10(2017:Oct.)
• Publication Date: 2017-09-12
• Subjects: excimer laser crystallization (ELC) -- light absorption layer -- location-controlled grain boundary -- polycrystalline silicon (poly-Si) -- thin-film transistor (TFT); Microelectromechanical systems -- Periodicals; Micromechanics -- Periodicals; 621.38105
• DOI: 10.1088/1361-6439/aa849e
• Languages: English
• ISSNs: 0960-1317

Abstract

Abstract: This paper reports the demonstration of structural effects on excimer laser crystallization (ELC) for the Si strip with a recessed-channel structure on the silicon nitride under-layer (RCS-ULN). We revealed that a single location-controlled grain boundary (GB) oriented normal to the Si strip in the middle site without any other GB in the recessed region can be attained via ELC for the RCS-ULN structures with a short recessed region between neighboring long thick regions in a narrow Si strip. This can be attributed to the effective production of a significant 2D lateral thermal gradient in the recessed region and neighboring thick regions. Consequently, the RCS-ULN TFTs fabricated at the position one-half of such an optimal recessed region can achieve a superior field-effect mobility of 670 c m 2 V − 1 ⋅ s − 1 with minor performance variations since the single-crystal-like Si channel has been adopted.