Ion Beam Defect Engineering on ReS2/Si Photocathode with Significantly Enhanced Hydrogen Evolution Reaction. Issue 3 (5th December 2018)

• Record Type: Journal Article
• Authors: Huang, Wentian; Zhou, Qingwei; Su, Shaoqiang; Li, Jing; Lu, Xubin; Gao, Xingsen; Wang, Xin; Jin, Mingliang; Zhou, Guofu; Zhang, Zhang; Liu, Junming
• Is Part Of: Advanced materials interfaces. Volume 6:Issue 3(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-12-05
• Subjects: defect engineering -- ion beam bombardment -- photoelectrochemical water splitting -- photocathodes -- ReS2; Materials science -- Periodicals; 620.11
• DOI: 10.1002/admi.201801663
• Languages: English
• ISSNs: 2196-7350

Abstract

Abstract: Loading 2D layered transition metal dichalcogenides (TMDs) on p‐type silicon photocathode is suitable for hydrogen production in solar‐driven photoelectrochemical (PEC) water splitting. Similarly, various nanostructured TMDs exposing more active sites are widely explored for improving the PEC performances of composite photoelectrodes. Here, defect engineering using a controllable argon ion beam bombardment is presented on ReS2 /Si photocathode. The atomic vacancy defects are introduced on the 2D ReS2 to realize high‐density active sites, which significantly enhance the solar‐driven hydrogen evolution reaction performance of ReS2 /Si photocathode. The highest photocurrent density of 18.5 mA cm −2 (at 0 V vs reversible hydrogen electrode) is achieved, under a simulated sun irradiation. Abstract : High‐density ReS2 nanosheets are directly grown on p‐Si substrates as ReS2 /Si photocathodes. A controllable Ar ion beam bombardment is employed to introduce Re vacancy defects on the ReS2 nanosheets. The defect engineered ReS2 /Si photocathode exhibits greatly enhanced photoelectrochemical–hydrogen evolution reaction (PEC–HER) performances with the optimum value of −18.5 mA cm −2 at 0 V versus RHE.