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HARVARD Citation
Wang, J. et al. (2018). Highly selective n-butanol gas sensor based on porous In2O3 nanoparticles prepared by solvothermal treatment. Materials science in semiconductor processing. pp. 139-143. [Online].
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Wang, J. et al. (2018). Highly selective n-butanol gas sensor based on porous In2O3 nanoparticles prepared by solvothermal treatment. Materials science in semiconductor processing. pp. 139-143. [Online].