The transition from linear to-parabolic growth of Cu3Si phase in Cu/a-Si system. (May 2018)

• Record Type: Journal Article
• Authors: Parditka, Bence; Zaka, Hanaa; Erdélyi, Gábor; Langer, Gábor A.; Ibrahim, Mohammed; Schmitz, Guido; Balogh-Michels, Zoltán; Erdélyi, Zoltán
• Is Part Of: Scripta materialia. Number 149(2018)
• Page Start: 36
• Page End: 39
• Publication Date: 2018-05
• Subjects: Silicide -- Solid state reaction -- SNMS -- Metal-induced crystallization -- Growth kinetics; Materials -- Periodicals; Metallurgy -- Periodicals; Metalen; Legeringen; Materiaalkunde; Metals, metalworking and machinery industries; Metals; Electronic journals; 620.11
• DOI: 10.1016/j.scriptamat.2018.01.035
• Languages: English
• ISSNs: 1359-6462

Abstract

Abstract: The solid state reaction between Cu and a-Si films was investigated at 150–200 °C by depth profiling with secondary neutral mass spectrometry. Intermixing was observed leading to the formation of a homogeneous Cu3 Si layer at the interface. The growth of the crystalline silicide follows a parabolic law at 165 °C and 200 °C. At 150 °C a transition from linear to parabolic kinetics is observed. Combining with our previous experimental results showing linear kinetics at 135 °C [Acta Materialia, 61 (2013) 7173–7179], the temperature dependence of the linear and parabolic coefficients as well as the transition length can be estimated. Graphical abstract: Unlabelled Image