Enhanced Tunable Light Absorption in Nanostructured Si Arrays Based on Double‐Quarter‐Wavelength Resonance. Issue 22 (2nd September 2019)

• Record Type: Journal Article
• Authors: Li, Zhigang; Feng, Shangshen; Liu, Yanping; Hu, Jinlian; Wang, Caifen; Wei, Bingqing
• Is Part Of: Advanced optical materials. Volume 7:Issue 22(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-09-02
• Subjects: colloidal lithography -- light absorption -- omnidirectional antireflection surface -- Si arrays; Optical materials -- Periodicals; Photonics -- Periodicals; 620.11295
• DOI: 10.1002/adom.201900845
• Languages: English
• ISSNs: 2195-1071

Abstract

Abstract: Simultaneously tuning light absorption wavelength and absorbance is a critical challenge in photoelectric detection, mimic of photosynthesis, and simulation of photoreceptors in some animals' retinas. Here, highly ordered hexagonal nanostructured Si arrays are fabricated using monolayer colloid crystal templates. A quantitative relationship between geometric size and light absorption is unveiled in the Si arrays, namely double‐quarter‐wavelength resonance (DQWR). Based on the DQWR model, the absorption wavelength can be readily tuned from 200 to 2400 nm, and the absorbance can be enhanced from ≈80% to above 99% in the full spectrum. Due to the hemisphere‐shell structural feature of the Si arrays, excellent omnidirectional antireflective performance can also be realized. Most importantly, the outstanding antireflection performance of the nanostructures is independent of the substrate. The results not only have important implications for understanding the antireflective mechanism of the nanostructured arrays, but also endow the approach promising in diverse applications, including biomimicry, antireflective film, infrared imagery, and other optoelectronic devices. Abstract : A double‐quarter‐wavelength resonance (DQWR) model is proposed to unveil the quantitative relationship between geometric size and light absorption peak position and intensity in Si arrays. Based on the DQWR model, one can quantitatively engineer light absorption peak position and absorbance (>99%) in any waveband from ultraviolet to the infrared region by simply adjusting the thickness and diameter of the nanostructured Si arrays.