Cite
HARVARD Citation
Chen, R. et al. (2019). Transient Resistive Switching for Nonvolatile Memory Based on Water‐Soluble Cs4PbBr6 Perovskite Films. Physica status solidi. 13 (11), p. n/a. [Online].
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Chen, R. et al. (2019). Transient Resistive Switching for Nonvolatile Memory Based on Water‐Soluble Cs4PbBr6 Perovskite Films. Physica status solidi. 13 (11), p. n/a. [Online].