A concise model to comprehension the transfer and output characteristics of polymeric field-effect transistors. (October 2019)

• Record Type: Journal Article
• Authors: Changshi, Liu
• Is Part Of: Polymer testing. Volume 79(2019)
• Publication Date: 2019-10
• Subjects: Drain current -- Drain voltage -- Gate voltage -- Polymeric field-effect transistors -- Model; Polymers -- Testing -- Periodicals; Polymères -- Tests -- Périodiques; 620.1920287
• DOI: 10.1016/j.polymertesting.2019.106081
• Languages: English
• ISSNs: 0142-9418

Abstract

Abstract: To obtain more quantitative electrical information of polymeric field-effect transistors, PFETs, this paper discuss a very important topic of the polymeric FETs modeling, and proposes a drain current-drain voltage, ISD -VSD, modeling approach only with two parameters for the PFETs. To validate the availability of the concise model proposed in the paper, experimental ISD -VSD curves data of four different PFETs are tested, simulation results show that the proposed models are accurate, effective and simple models for PFETs. And then an analytical description of relationship ISD and gate voltage, VG, is obtained. Furthermore, new path to calculate threshold voltage, Vth, by means of mathematical method is constructed. Hence, indeed new and more quantitative electrical information of PFETs is obtained. Highlights: The drain current of polymeric field-effect transistors is predicted by drain voltage. The drain current of polymeric field-effect transistors is predicted by gate voltage. New quantitative electronics information of polymeric field-effect transistors is obtained. Good application results are obtained.