Photo‐/Thermal‐Responsive Field‐Effect Transistor upon Blending Polymeric Semiconductor with Hexaarylbiimidazole toward Photonically Programmable and Thermally Erasable Memory Device. Issue 44 (18th September 2019)

• Record Type: Journal Article
• Authors: Liu, Yidong; Yang, Yizhou; Shi, Dandan; Xiao, Mingchao; Jiang, Lang; Tian, Jianwu; Zhang, Guanxin; Liu, Zitong; Zhang, Xisha; Zhang, Deqing
• Is Part Of: Advanced materials. Volume 31:Issue 44(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-09-18
• Subjects: hexaarylbiimidazole -- memory devices -- photoresponsive field‐effect transistors -- semiconducting polymers; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201902576
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract: It is shown that the semiconducting performance of field‐effect transistors (FETs) with PDPP4T (poly(diketopyrrolopyrrole‐quaterthiophene)) can be reversibly tuned by UV light irradiation and thermal heating after blending with the photochromic hexaarylbiimidazole compound ( p ‐NO2 ‐HABI). A photo‐/thermal‐responsive FET with a blend thin film of PDPP4T and p ‐NO2 ‐HABI is successfully fabricated. The transfer characteristics are altered significantly with current enhanced up to 10 6 ‐fold at V G = 0 V after UV light irradiation. However, further heating results in the recovery of the transfer curve. This approach can be extended to other semiconducting polymers such as P3HT (poly(3‐hexyl thiophene)), PBTTT (poly(2, 5‐bis(3‐tetradecylthiophen‐2‐yl)thieno[3, 2‐b] thiophene)) and PDPPDTT (poly(diketopyrrolopyrrole‐dithienothiophene)). It is hypothesized that TPIRs (2, 4, 5‐triphenylimidazolyl radicals) formed from p ‐NO2 ‐HABI after UV light irradiation can interact with charge defects at the gate dielectric–semiconductor interface and those in the semiconducting layer to induce more hole carriers in the semiconducting channel. The application of the blend thin film of PDPP4T and p ‐NO2 ‐HABI is further demonstrated to fabricate the photonically programmable and thermally erasable FET‐based nonvolatile memory devices that are advantageous in terms of i) high ON/OFF current ratio, ii) nondestructive reading at low electrical bias, and iii) reasonably highly stable ON‐state and OFF‐state. Abstract : A photo‐/thermal‐responsive field‐effect transistor is successfully fabricated by blending conjugated semiconducting polymer with a photochromic and thermally responsive hexaarylbiimidazole derivative and using octadecyltrichlorosilane‐modified SiO2 as the gate dielectric. Such transistors can be utilized to fabricate photonically programmable and thermally erasable FET‐based nonvoltaile memory devices with outstanding memory performance.