Monolayer MoS2 growth at the Au–SiO2 interface. Issue 42 (28th August 2019)

• Record Type: Journal Article
• Authors: Lim, Hong En; Irisawa, Toshifumi; Okada, Naoya; Okada, Mitsuhiro; Endo, Takahiko; Nakanishi, Yusuke; Maniwa, Yutaka; Miyata, Yasumitsu
• Is Part Of: Nanoscale. Volume 11:Issue 42(2019)
• Page Start: 19700
• Page End: 19704
• Publication Date: 2019-08-28
• Subjects: Nanoscience -- Periodicals; Nanotechnology -- Periodicals; 620.505
• DOI: 10.1039/c9nr05119h
• Languages: English
• ISSNs: 2040-3364

Abstract

Abstract : Monolayer MoS2 was grown directly at the interface between Au and SiO2 by CVD. Abstract : Atomically thin transition-metal dichalcogenides (TMDs) are attracting great interest for future electronic applications. Even though much effort has been devoted to preparing large-area, high-quality TMDs over the past few years, the samples are usually grown on substrate surfaces. Here, we demonstrate the direct growth of a MoS2 monolayer at the interface between a Au film and a SiO2 substrate. MoS2 grains were nucleated below Au films deposited on SiO2 via interface diffusion and then grown into a continuous MoS2 film. By programming the Au pattern deposited, controlled growth of MoS2 with the desired size and geometry was achieved over preferred locations, facilitating its integration into functional field-effect transistors. Our findings elucidate the fabrication of a two-dimensional semiconductor at the interface of bulk three-dimensional solids, providing a novel means for establishing a clean interface junction. It also offers a promising alternative to the site-selective synthesis of TMDs, which is expected to aid the fabrication of TMD-based nanodevices.