Can Electrostatic Discharge Sensitive electronic devices be damaged by electrostatic fields?. (October 2019)

• Record Type: Journal Article
• Authors: Smallwood, Jeremy
• Is Part Of: Journal of physics. Volume 1322(2019)
• Publication Date: 2019-10
• Subjects: Physics -- Congresses; 530.5
• DOI: 10.1088/1742-6596/1322/1/012015
• Languages: English
• ISSNs: 1742-6588

Abstract

Abstract: In recent years the susceptibility of ElectroStatic Discharge Sensitive devices (ESDS) to electrostatic fields has been questioned. This paper proposes that very high impedance voltage sensitive ESDS such as MOSFETs or MOS capacitors can be damaged due external field changes without making contact with other conductors in the presence of the field. A simple electronic model is proposed. In a practical evaluation of this risk, discharges are demonstrated to occur due changing external fields, as a result of breakdown of a voltage sensitive structure in a high impedance circuit with one terminal continuously grounded.