Growth of GaAs nanowire–graphite nanoplatelet hybrid structures. Issue 41 (8th October 2019)

• Record Type: Journal Article
• Authors: Berdnikov, Yury; Sibirev, Nickolay V.; Khayrudinov, Vladislav; Alaferdov, Andrei; Moshkalev, Stanislav; Ubyivovk, Evgeny V.; Lipsanen, Harri; Bouravleuv, Alexei
• Is Part Of: CrystEngComm. Volume 21:Issue 41(2019)
• Page Start: 6165
• Page End: 6172
• Publication Date: 2019-10-08
• Subjects: Crystals -- Periodicals; Crystal growth -- Periodicals; Crystallography -- Periodicals; Cristaux -- Périodiques; Cristaux -- Croissance -- Périodiques; Cristallographie -- Périodiques; 548
• DOI: 10.1039/c9ce01027k
• Languages: English
• ISSNs: 1466-8033

Abstract

Abstract : The scenarios of MOVPE growth of planar and non-planar GaAs nanowires are controlled with graphite nanoplatelet substrates and catalyst placement. Abstract : We study the formation of GaAs nanowire–graphite nanoplatelet hybrid nanostructures. Quasi van der Waals epitaxy was used to grow vapor–liquid–solid nanowires on a silicon substrate covered by graphite nanoplatelets. We have found that either horizontal or inclined nanowires can form depending on the relative positions of graphite nanoplatelets and the placement of catalyst nanoparticles. We present a model, which is capable of describing the experimentally observed scenarios of planar and non-planar NW growth. Both theoretical and experimental studies show that the use of nanoplatelet substrates allows engineering of the morphologies of planar and inclined nanowires.