Electric-field-induced simultaneous diffusion of Mg and H in Mg-doped GaN prepared using ultra-high-pressure annealing. (15th October 2019)

• Record Type: Journal Article
• Authors: Narita, Tetsuo; Sakurai, Hideki; Bockowski, Michal; Kataoka, Keita; Suda, Jun; Kachi, Tetsu
• Is Part Of: Applied physics express. Volume 12:Number 11(2019)
• Publication Date: 2019-10-15
• Subjects: gallium nitride -- diffusion -- anneal -- magnesium -- hydrogen; Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/1882-0786/ab4934
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: To investigate Mg diffusion during ultra-high-pressure annealing, which activates Mg acceptors in GaN, GaN samples with p–n junctions prepared via epitaxial growth were annealed at 1573 K under 1 GPa. The profiles of Mg diffusion toward the underlying n-type layer cannot be explained by a simple diffusion model. We found that H atoms diffused along with Mg atoms. By considering the suppressed diffusion of positively charged interstitial H atoms due to the electric field in the depletion layer, we could better reproduce the Mg–H diffusion profiles, suggesting that H atoms play a key role in the Mg diffusion process.