Impact of 3D growth and SiNx interlayer on the quality of (11–22) semi-polar GaN grown on m-plane sapphire. (4th October 2019)

• Record Type: Journal Article
• Authors: Xing, Kun; Chen, Shirong; Tao, Xiao; Lee, Chiaan; Wang, Jiangtao; Xu, Qi; Liang, Huaguo
• Is Part Of: Applied physics express. Volume 12:Number 11(2019)
• Publication Date: 2019-10-04
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/1882-0786/ab47b7
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: We report the growth of semi-polar (11−22) GaN films with low defect densities on m -plane sapphire substrates by incorporating a porous SiN x interlayer in a three-stage growth process. The linewidth of X-ray diffraction rocking curves for our semi-polar GaN films decrease with increasing SiN x deposition time. Cross-sectional transmission electron microscopy analyzes confirm that the proposed three-stage growth process greatly reduces the semi-polar GaN threading dislocation densities down to 7 × 10 8 cm −2 . Photoluminescence measurements demonstrate that InGaN/GaN quantum wells grown on our semi-polar GaN films provide peak intensities that are 26-fold greater than those grown on semi-polar GaN by a standard method.