Manipulation of the electrical behaviors of Cu/MXene/SiO2/W memristor. (19th September 2019)

• Record Type: Journal Article
• Authors: Wang, Yuqi; Liu, Xinwei; Chen, Yihao; Xu, Wei; Liang, Dingkang; Gao, Fei; Zhang, Miaocheng; Samanta, Subhranu; Gong, Xiao; Lian, Xiaojuan; Wan, Xiang; Tong, Yi
• Is Part Of: Applied physics express. Volume 12:Number 10(2019)
• Publication Date: 2019-09-19
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/1882-0786/ab4233
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: Electronic synapses with both long-term and short-term plasticity are considered as significant components for constructing brain-inspired computing systems. Research progress on electrical synapses have proved that memristors possess huge similarities with biological synapses. Nevertheless, an effective mean of manipulating the biological properties of memristors is still unclear. In this letter, we propose a memristor and reveal that the compliance current of electroforming plays an active role in tuning short-term and long-term plasticity of the memristors. The results may provide a useful guideline for manipulating memristor as electronic synapses in the hardware implementation of artificial neural networks.