Tuning of bipolar resistive switching and memory characteristics of cadmium sulphide nanorods embedded in PMMA matrix. (11th October 2019)

• Record Type: Journal Article
• Authors: Gogoi, Koustav Kashyap; Das, Rajdeep; Paul, Tanmoy; Ghosh, Sharmistha; Chowdhury, Avijit
• Is Part Of: Materials research express. Volume 6:Number 11(2019)
• Publication Date: 2019-10-11
• Subjects: CdS nanorods -- polymer nanocomposite -- organic switching device -- tuning of set voltage -- conduction mechanism; Materials science -- Research -- Periodicals; Materials science -- Periodicals; 620.11
• DOI: 10.1088/2053-1591/ab4a6f
• Languages: English
• ISSNs: 2053-1591

Abstract

Abstract: Resistive switching of polymer films embedded with 1D inorganic nanofillers have emerged as a high performance candidate for their promising applications in next-generation organic switching and memory devices. Herein, we report organic switching devices (OSDs) with cadmium sulphide (CdS) nanorods (NRs) encapsulated within a polymer layer, sandwiched between aluminum (Al) and indium tin oxide (ITO) electrodes. CdS-NRs were synthesized by following a simple and low cost technique and dispersed with different wt% in poly methyl-methacrylate (PMMA) to prepare the nanocomposites and spin-casted on the ITO substrates to fabricate the devices (ITO/PMMA-CdSNRs/Al). The morphology, crystal phase, and structural properties of the CdS NRs were carefully investigated with the help of various characterization techniques such as UV-visible absorption, photoluminescence (PL), X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The current density versus voltage (J-V) characteristics of the fabricated devices were noted and switching performances were studied by varying the weight percent (wt %) of the nanofillers. All the devices exhibited bipolar resistive switching characteristics at lower switching voltage ( V S E T < 2 V). With increasing the wt% of CdS NRs, the V S E T shifted towards the lower voltage region, whereas current density ON/OFF (JON /JOFF ) ratio decreased. Retention (10 4 s) and endurance test (1000 cycles) were performed for all the devices which indicates that the fabricated devices were highly stable under repeated sweep showing excellent memory characteristics. Also, the J-V characteristics of the fabricated devices were fitted to discuss the conduction mechanism. Schematic band diagram is proposed to explain bi-stable behavior of the fabricated devices.