Cite
HARVARD Citation
Idris, M. et al. (2019). Positive flatband voltage shift in phosphorus doped SiO2/N-type 4H-SiC MOS capacitors under high field electron injection. Journal of physics. p. . [Online].
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Idris, M. et al. (2019). Positive flatband voltage shift in phosphorus doped SiO2/N-type 4H-SiC MOS capacitors under high field electron injection. Journal of physics. p. . [Online].