Cite
HARVARD Citation
Pham, K. et al. (2019). Tunable electronic properties of InSe by biaxial strain: from bulk to single-layer. Materials research express. p. . [Online].
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Pham, K. et al. (2019). Tunable electronic properties of InSe by biaxial strain: from bulk to single-layer. Materials research express. p. . [Online].