Six new silicon phases with direct band gaps. Issue 36 (3rd September 2019)

• Record Type: Journal Article
• Authors: Wei, Qun; Tong, Wen; Wei, Bing; Zhang, Meiguang; Peng, Xihong
• Is Part Of: Physical chemistry chemical physics. Volume 21:Issue 36(2019)
• Page Start: 19963
• Page End: 19968
• Publication Date: 2019-09-03
• Subjects: Chemistry, Physical and theoretical -- Periodicals; 541.3
• DOI: 10.1039/c9cp03128f
• Languages: English
• ISSNs: 1463-9076

Abstract

Abstract : Six new silicon phases with direct band gaps were found through silicon atomic substitution of carbon in the known carbon structures via high-throughput calculations. Abstract : Six new silicon phases with direct band gaps were found through silicon atomic substitution of carbon in the known carbon structures via high-throughput calculations. The six newly discovered Si phases are in the space groups of Im 3̄ m, C 2/ c, I 4/ mcm, I 4/ mmm, P 21 / m, and P 4/ mbm, respectively. Their crystal structures, stabilities, mechanical properties, elastic anisotropy, and electronic and optical properties were systematically studied using first-principles density functional theory calculations. All the new phases were proved to be thermodynamically and mechanically stable at ambient pressure. The direct band gap values in the range of 0.658–1.470 eV and the excellent optoelectronic properties of these six Si allotropes suggest that they are promising photovoltaic materials compared to diamond silicon.