Double doping effect on ferroelectric and leakage current behavior of Pb(Zr0.52Ti0.48)O3 thin film. Issue 18 (15th December 2019)

• Record Type: Journal Article
• Authors: A, Antony Jeyaseelan; Rangappa, Dinesh; Dutta, Soma
• Is Part Of: Ceramics international. Volume 45:Issue 18(2019)Part B
• Page Start: 25027
• Page End: 25033
• Publication Date: 2019-12-15
• Subjects: Thin film -- Double doping -- XRD -- Raman -- Ferroelectricity -- Piezoelectricity; Ceramics -- Periodicals; Céramique industrielle -- Périodiques; Ceramics; Periodicals; Electronic journals; 666
• DOI: 10.1016/j.ceramint.2019.07.347
• Languages: English
• ISSNs: 0272-8842

Abstract

Abstract: To study the double doping effect on PZT, following thin films were prepared with stoichiometric compositions of Pb(Zr0·52 Ti0·48 )O3 (PZT), Pb0·92 La0·08 (Zr0·52 Ti0·48 )0.98 O3 (PLZT) and Pb0·92 (La0.5 Yb0.5 )0·08 (Zr0·52 Ti0·48 )0.98 O3 (PLYZT) by chemical solution deposition method. XRD results revealed tetragonal crystal structure of all the three thin film compositions with significant changes in lattice parameters for La 3+ and La 3+ -Yb 3+ doped PZT film. Raman study confirmed XRD results. The influence of structural changes on ferroelectric behavior was investigated by studying ferroelectric switching current, remanent polarization and coercive field. An increase in ferroelectric switching current and decrease in coercive field was observed in double doped (La 3+ and Yb 3+ ) PZT thin films than the pure one. This result indicates easy domain switching in doped PZT thin films. The double doping has reduced leakage current in PZT by compensating oxygen vacancy and thereby improved the polarization fatigue.