Cite
HARVARD Citation
Ishibashi, S. et al. (2019). Computational study of positron annihilation parameters for cation mono-vacancies and vacancy complexes in nitride semiconductor alloys. Journal of physics. p. . [Online].
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Ishibashi, S. et al. (2019). Computational study of positron annihilation parameters for cation mono-vacancies and vacancy complexes in nitride semiconductor alloys. Journal of physics. p. . [Online].