N-type large single crystal diamond with S doping and B-S co-doping grown in FeNi–C system. (June 2019)

• Record Type: Journal Article
• Authors: Wang, Jiankang; Li, Shangsheng; Cui, Jinlei; Feng, Lu; Yu, He; Su, Taichao; Hu, Meihua; Yu, Kunpeng; Han, Fei; Ma, Hongan; Jia, Xiaopeng
• Is Part Of: International journal of refractory metals & hard materials. Volume 81(2019)
• Page Start: 100
• Page End: 110
• Publication Date: 2019-06
• Subjects: Large single-crystal diamond -- HPHT -- B-S co-doping -- N-type; Heat resistant alloys -- Periodicals; Refractory materials -- Periodicals; Metallography -- Periodicals; Alliages réfractaires -- Périodiques; Matériaux réfractaires -- Périodiques; Métallographie -- Périodiques; Heat resistant alloys; Metallography; Refractory materials; Periodicals; Electronic journals; 669.73
• DOI: 10.1016/j.ijrmhm.2019.02.011
• Languages: English
• ISSNs: 0263-4368

Abstract

Abstract: The n-type semiconductor large single diamonds with S doping and B-S co-doping were successfully synthesized in FeNi-C system at the constant conditions about temperature 1250 °C and pressure 5.6 GPa. In this study, the effects of different additive amounts of FeS doping alone and B-FeS co-doping on the crystal shape, crystal face, color and quality of diamonds were investigated. The influence of B-FeS co-doping on the V-shaped region of diamond growth is greater than that of FeS-doping diamond. The color of FeS doping crystals change from bright yellow to bright green and then appear grayish yellow. On the contrast, the color of B-FeS co-doping diamond changes from yellowish green to grayish green and black. We found that our obtained diamond contains B/S/N elements, and S exists in C-S-O forms in diamond lattice. Besides, as the increasing amount of additive B, the content of S/N relative to C is also improved. FeS instead of S as an additive is more conducive to incorporation of S into diamond than that in previous studies. The results of Hall Effect measurement showed that diamonds with FeS single-doping and B-FeS co-doping are n-type semiconductors. B-FeS co-doping not only contributes to improvement Hall mobility and carrier density but the reduction of resistance in diamond. The previous study of the first-principles calculation for n-type B-S co-doping and S-doping diamond was verified experimentally by synthesizing FeS-doping and B-FeS co-doping large single crystal diamonds in this paper. This work helps to further understand the mechanism of the synthesis and electrical properties of B-FeS co-doping and FeS single-doping diamond. Highlights: FeS instead of S as an additive is more conducive to the incorporation of S into diamond than that in previous studies. The calculation for n-type diamonds with S-doping and B-S co-doping is verified by growing diamonds with FeS as S source. The minimum resistivity of B-FeS co-doping diamond is 9.62 × 10 4 Ω·cm, and its maximum Hall mobility is 1092.516 cm 2 /Vs.