Graphene transfer in vacuum yielding a high quality graphene. (November 2015)

• Record Type: Journal Article
• Authors: Lee, Sangchul; Lee, Sang Kyung; Kang, Chang Goo; Cho, Chunhum; Lee, Young Gon; Jung, Ukjin; Lee, Byoung Hun
• Is Part Of: Carbon. Volume 93(2015)
• Page Start: 286
• Page End: 294
• Publication Date: 2015-11
• Subjects: Carbon -- Periodicals; Carbone -- Périodiques; Koolstof; Toepassingen; Electronic journals; 546.681
• DOI: 10.1016/j.carbon.2015.05.038
• Languages: English
• ISSNs: 0008-6223

Abstract

Abstract: The importance of proper graphene transfer process cannot be emphasized more because it is so closely related to the performance and stability of graphene devices. In this work, a new transfer method utilizing a voluntary bonding of a graphene film to a target substrate in vacuum is demonstrated. The problems originated from water and air molecules which prevent a robust bonding and degrade the electrical characteristics could be drastically alleviated. As a result, graphene field-effect transistors showed nearly symmetric I d – V g characteristics with a minimal hysteresis and drastically improved device stability in air for more than a month could be obtained.