Cite
HARVARD Citation
Uedono, A. et al. (2019). Annealing Behavior of Vacancy‐Type Defects in Mg‐ and H‐Implanted GaN Studied Using Monoenergetic Positron Beams. Physica status solidi. 256 (10), p. n/a. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Uedono, A. et al. (2019). Annealing Behavior of Vacancy‐Type Defects in Mg‐ and H‐Implanted GaN Studied Using Monoenergetic Positron Beams. Physica status solidi. 256 (10), p. n/a. [Online].