A Force‐Engineered Lint Roller for Superclean Graphene. Issue 43 (10th September 2019)

• Record Type: Journal Article
• Authors: Sun, Luzhao; Lin, Li; Wang, Zihao; Rui, Dingran; Yu, Zhiwei; Zhang, Jincan; Li, Yanglizhi; Liu, Xiaoting; Jia, Kaicheng; Wang, Kexin; Zheng, Liming; Deng, Bing; Ma, Tianbao; Kang, Ning; Xu, Hongqi; Novoselov, Konstantin S.; Peng, Hailin; Liu, Zhongfan
• Is Part Of: Advanced materials. Volume 31:Issue 43(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-09-10
• Subjects: clean surface -- contaminants -- graphene -- ultrahigh mobility; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201902978
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract: Contamination is a major concern in surface and interface technologies. Given that graphene is a 2D monolayer material with an extremely large surface area, surface contamination may seriously degrade its intrinsic properties and strongly hinder its applicability in surface and interfacial regions. However, large‐scale and facile treatment methods for producing clean graphene films that preserve its excellent properties have not yet been achieved. Herein, an efficient postgrowth treatment method for selectively removing surface contamination to achieve a large‐area superclean graphene surface is reported. The as‐obtained superclean graphene, with surface cleanness exceeding 99%, can be transferred to dielectric substrates with significantly reduced polymer residues, yielding ultrahigh carrier mobility of 500 000 cm 2 V −1 s −1 and low contact resistance of 118 Ω µm. The successful removal of contamination is enabled by the strong adhesive force of the activated‐carbon‐based lint roller on graphene contaminants. Abstract : A new approach to clean the surface of graphene is reported by using a force‐engineered "lint roller", which is enabled by selectively removing intrinsic surface contaminants on graphene. The as‐obtained superclean graphene can be transferred to dielectric substrates with significantly reduced polymer residues and exhibits superior electronic and optical properties such as ultrahigh carrier mobility and low contact resistance.