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HARVARD Citation
Khan, M. et al. (2019). An improved temperature dependent analytical model to predict AlGaN/GaN high electron mobility transistors AC characteristics. International journal of numerical modelling. p. n/a. [Online].
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Khan, M. et al. (2019). An improved temperature dependent analytical model to predict AlGaN/GaN high electron mobility transistors AC characteristics. International journal of numerical modelling. p. n/a. [Online].