100 MeV Silicon9+ swift heavy ion irradiation - Strategic defect annealing approach to enhance the electrical conductivity of few-layered MoS2 sheets - PVA nanocomposite film. (November 2019)

• Record Type: Journal Article
• Authors: Ratan, Amar; Kunchakara, Suhasini; Dutt, Meenakshi; Tripathi, Ambuj; Singh, Vaishali
• Is Part Of: Vacuum. Volume 169(2019)
• Publication Date: 2019-11
• Subjects: MoS2-PVA nanocomposites -- Swift heavy ion irradiation -- Annealing effect -- Raman disorderness -- Electrical conductivity; Vacuum -- Periodicals; 621.55
• DOI: 10.1016/j.vacuum.2019.108939
• Languages: English
• ISSNs: 0042-207X

Abstract

Abstract: In this study, we report a strategic route to enhance the electrical conductivity of solvent exfoliated MoS2 nanosheets dispersed in Poly-vinyl alcohol (PVA) matrix as a free-standing thin film. 100 MeV Silicon 9+ swift ion beam is used to anneal the defects and decrease the degree of disorderness of MoS2 while in the polymer matrix. Homogeneous dispersion and strong interfacial interaction between the nano-sheets and PVA matrix increases the charge carrier mobility, which in turn results in a dynamic increase of conductivity by 2 orders of magnitude i.e. from 2.5 x 10 −5 S/cm (pristine) to 2.9 x 10 −3 S/cm (irradiated) at a fluence of 1 x 10 11 ions/cm 2 . Highlights: Free standing thin films of solvent assisted exfoliated MoS2 as fillers in PVA matrix. Nanocomposite films irradiated with 100 MeV Silicon 9+ swift ion beam using 15UD Pelletron. Defect annealing and dispersion of MoS2 while in the polymer matrix facilitated by ion beam irradiation. Strong interfacial interaction between the nano-sheets and PVA matrix increases the charge carrier mobility. Increase in conductivity by 2 orders of magnitude upon irradiation at a fluence of 1 x 10 11 ions/cm 2 .