Ti3C2Tx MXene characterization produced from SHS-ground Ti3AlC2. (5th December 2019)

• Record Type: Journal Article
• Authors: Pazniak, Anna; Bazhin, Pavel; Shplis, Nikolay; Kolesnikov, Evgeniy; Shchetinin, Igor; Komissarov, Alexander; Polcak, Josef; Stolin, Alexander; Kuznetsov, Denis
• Is Part Of: Materials & design. Volume 183(2019)
• Publication Date: 2019-12-05
• Subjects: MXenes -- Self-propagation high-temperature synthesis -- Chemical etching -- Electrical conductivity; Materials -- Periodicals; Engineering design -- Periodicals; Matériaux -- Périodiques; Conception technique -- Périodiques; Electronic journals; 620.11
• DOI: 10.1016/j.matdes.2019.108143
• Languages: English
• ISSNs: 0264-1275

Abstract

Abstract: MXenes are an emerging family of two-dimensional (2D) early transition metal carbides/nitrides that are produced by selective A-element chemical etching from 3D MAX phase counterpart. Herein we report a low-cost method combining self-propagation high-temperature synthesis (SHS) and grinding to produce Ti3 AlC2 precursor and further its usage to obtain Ti3 C2 Tx MXene. The SHS-ground precursor requires the same etching conditions as pressure-less synthesized precursors to fully etch A-layer and convert the 3D structure into 2D state. The obtained MXenes are atomically-thin flakes with an average lateral size of 1–2 μm. The room temperature electrical resistivity of Ti3 C2 Tx based 11 μm-thick film ranges between 295 and 317 μΩ·cm. SHS combining with grinding in one step can be considered as a scalable method to MXene synthesis. Graphical abstract: Unlabelled Image Highlights: SHS-grinding produces Ti3 AlC2 powder, thus avoiding the difficulties of crushing synthesized compacts SHS-ground Ti3 AlC2 requires the same etching conditions as a pressure-less synthesized precursor to fully etch A-layer Ti3 C2 Tx based 11μm-thick film exhibits electrical conductivity of 3267 S·cm -1