Gate‐Tunable Electrical Transport in Thin 2M‐WS2 Flakes. (23rd July 2019)

• Record Type: Journal Article
• Authors: Che, Xiangli; Deng, Yujun; Fang, Yuqiang; Pan, Jie; Yu, Yijun; Huang, Fuqiang
• Is Part Of: Advanced Electronic Materials. Volume 5:Number 10(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-07-23
• Subjects: gating -- monoclinic phase -- phase diagram -- superconductor -- WS2; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201900462
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract: Electrolyte gating has been employed as an effective way to modulate the electronic properties of transition metal dichalcogenides (TMDs) by carrier doping over a wide range. Here, the carrier density of a new metastable phase of TMD material 2M‐WS2 is controlled by electrolyte gating to achieve reversible transitions between the superconducting state, metallic state, and insulating state. Pristine 2M‐WS2 has a superconducting transition temperature ( T c ) of 8.9 K with a hole‐type carrier density of 9.05 × 10 21 cm −3 at 100 K. A gate voltage ( V g ) is applied between the sample and a side gate, which are both immersed in a droplet of gel‐like Li‐ion electrolyte (LiClO4 dissolved in polyethylene oxide matrix). When V g = −3.5 V, the sample is in its pristine superconducting phase. With increasing V g, the lithium ions gradually intercalate into the layered sample and tune it from a superconductor to an insulator. By precise tuning of V g in this device, the entire phase diagram of 2M‐WS2 over a large range of carrier density is obtained. Abstract : As a new metastable phase of transition metal dichalcogenide materials, 2M‐WS2 has a superconducting transition temperature of 8.9 K. The carrier density of 2M‐WS2 is controlled by electrolyte gating to achieve reversible transitions between the superconducting state, metallic state, and insulating state.