A Single‐Electron Transistor Made of a 3D Topological Insulator Nanoplate. Issue 42 (6th September 2019)
- Record Type:
- Journal Article
- Title:
- A Single‐Electron Transistor Made of a 3D Topological Insulator Nanoplate. Issue 42 (6th September 2019)
- Main Title:
- A Single‐Electron Transistor Made of a 3D Topological Insulator Nanoplate
- Authors:
- Jing, Yumei
Huang, Shaoyun
Wu, Jinxiong
Meng, Mengmeng
Li, Xiaobo
Zhou, Yu
Peng, Hailin
Xu, Hongqi - Abstract:
- Abstract: Quantum confined devices of 3D topological insulators are proposed to be promising and of great importance for studies of confined topological states and for applications in low‐energy‐dissipative spintronics and quantum information processing. The absence of energy gap on the topological insulator surface limits the experimental realization of a quantum confined system in 3D topological insulators. Here, the successful realization of single‐electron transistor devices in Bi2 Te3 nanoplates using state‐of‐the‐art nanofabrication techniques is reported. Each device consists of a confined central island, two narrow constrictions that connect the central island to the source and drain, and surrounding gates. Low‐temperature transport measurements demonstrate that the two narrow constrictions function as tunneling junctions and the device shows well‐defined Coulomb current oscillations and Coulomb‐diamond‐shaped charge‐stability diagrams. This work provides a controllable and reproducible way to form quantum confined systems in 3D topological insulators, which should greatly stimulate research toward confined topological states, low‐energy‐dissipative devices, and quantum information processing. Abstract : A topological insulator single‐electron transistor device is fabricated using state‐of‐the‐art nanofabrication techniques, and the device shows well‐defined Coulomb current oscillations and Coulomb‐diamond‐shaped charge stability diagrams.
- Is Part Of:
- Advanced materials. Volume 31:Issue 42(2019)
- Journal:
- Advanced materials
- Issue:
- Volume 31:Issue 42(2019)
- Issue Display:
- Volume 31, Issue 42 (2019)
- Year:
- 2019
- Volume:
- 31
- Issue:
- 42
- Issue Sort Value:
- 2019-0031-0042-0000
- Page Start:
- n/a
- Page End:
- n/a
- Publication Date:
- 2019-09-06
- Subjects:
- bismuth telluride -- Coulomb blockade -- single‐electron transistors -- topological insulators
Materials -- Periodicals
Chemical vapor deposition -- Periodicals
620.11 - Journal URLs:
- http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1521-4095 ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/adma.201903686 ↗
- Languages:
- English
- ISSNs:
- 0935-9648
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 0696.897800
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 11867.xml