Chemical Doping: Chemically Tuned p‐ and n‐Type WSe2 Monolayers with High Carrier Mobility for Advanced Electronics (Adv. Mater. 42/2019). Issue 42 (15th October 2019)

• Record Type: Journal Article
• Authors: Ji, Hyun Goo; Solís‐Fernández, Pablo; Yoshimura, Daisuke; Maruyama, Mina; Endo, Takahiko; Miyata, Yasumitsu; Okada, Susumu; Ago, Hiroki
• Is Part Of: Advanced materials. Volume 31:Issue 42(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-10-15
• Subjects: chemical doping -- chemical vapor deposition -- complementary inverter -- p‐n junction -- tungsten diselenide; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201970301
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : In article number1903613, Hiroki Ago and co‐workers demonstrate the chemical‐doping‐induced conversion of ambipolar WSe2 monolayers to p‐ and n‐type semiconductors. The chemical doping not only allows control over the main carriers, but also significantly increases the carrier mobility. By integrating the chemically doped WSe2, a CMOS inverter and an in‐plane p–n junction with superior performance are successfully fabricated.