Enhanced Ferroelectric Functionality in Flexible Lead Zirconate Titanate Films with In Situ Substrate‐Clamping Compensation. (23rd July 2019)

• Record Type: Journal Article
• Authors: Onn Winestook, Rachel; Saguy, Cecile; Ma, Chun‐Hao; Chu, Ying‐Hao; Ivry, Yachin
• Is Part Of: Advanced Electronic Materials. Volume 5:Number 10(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-07-23
• Subjects: ferroelectric stability -- flexible electronics -- in situ AFM -- nanodomains -- nanoscale strain; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201900428
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract: Much attention has recently been given to flexible and wearable integrated electronic devices, with a strong emphasis on real‐time sensing, computing, and communication technologies. Thin ferroelectric films exhibit switchable polarization and strong electromechanical coupling, and hence are in widespread use in such technologies, albeit not when flexed. Effects of extrinsic strain on thin ferroelectric films are still unclear, mainly due to the lack of suitable experimental systems that allow cross structural–functional characterization with in situ straining. Moreover, although the effects of intrinsic strain on ferroelectric films, e.g., due to film–substrate lattice mismatch, have been extensively investigated, it is unclear how these effects are influenced by external strain. A method to strain thin films homogenously in situ is developed, allowing structural characterization as well as functional switching and piezorsponse measurements at the nanoscale, while retaining the sample under constant straining conditions. Using this method, thin films of PbZr0.2 Ti0.8 O3, which were grown on a flexible mica substrate, are strained to reduce substrate clamping effects and increase the tetragonality. Consequently, the domain stability is increased, the coercive field value is decreased, and imprint effects are reduced. This method also allows direct characterization of the relationship between the lattice parameters and nanoscale properties of other flexible materials. Abstract : Ferroelectrics change their properties under extrinsic strain . A 4‐point bending stage for introducing homogeneous and tunable strain on flexible ferroelectric films is developed. It allows cross‐structural (X‐ray diffraction) and functional (piezoresponse force microscopy) characterization in situ. Extrinsic strain applied with such a stage for compensating substrate clamping enhances the functionality of thin ferroelectric films.