Sm-doping induced large enhancement of antiferroelectric and energy storage performances of (111) oriented PbZrO3 thin films. Issue 17 (1st December 2019)

• Record Type: Journal Article
• Authors: Thatikonda, Santhosh Kumar; Huang, Wenhua; Du, Xingru; Yao, Chuangye; Ke, Yifu; Wu, Jiang; Qin, Ni; Bao, Dinghua
• Is Part Of: Ceramics international. Volume 45:Issue 17(2019)Part B
• Page Start: 23586
• Page End: 23591
• Publication Date: 2019-12-01
• Subjects: Preferred orientation -- Antiferroelectric film -- Raman spectra -- Energy storage -- Dielectric properties; Ceramics -- Periodicals; Céramique industrielle -- Périodiques; Ceramics; Periodicals; Electronic journals; 666
• DOI: 10.1016/j.ceramint.2019.08.069
• Languages: English
• ISSNs: 0272-8842

Abstract

Abstract: Antiferroelectric Sm-doped PbZrO3 (PSZO) thin films were prepared on Pt(111)/Ti/SiO2 /Si substrates using a chemical solution deposition method. The effects of Sm doping concentration on structural, morphology, dielectric, antiferroelectric, and energy storage characteristics of PSZO thin films were investigated. With Sm doping, all the thin films were crystallized in perovskite phase along with a strong (111)- preferential orientation. It is found that Sm doping significantly altered the Curie temperature (Tc ) and electric field-induced phase switching of the films. The PSZO film with Sm = 0.01 exhibited a maximum polarization of 53.7 μC/cm 2, an energy storage density of 17.1 J/cm 3 at ~444 kV/cm, and a dielectric constant of 175 at 1 kHz. The improved energy storage performance was attributed to high (111) degree of preferred orientation and site occupation of Sm ions.