Self-patterning methodology by spin coating for oxide thin-film transistors. (January 2020)

• Record Type: Journal Article
• Authors: Lee, Jun Seok; Choi, Woon-Seop
• Is Part Of: Materials research bulletin. Volume 121(2020)
• Publication Date: 2020-01
• Subjects: Self pattern -- Spin coating -- Surface treatment -- Solution-process -- Oxide TFTs; Materials -- Periodicals; Crystal growth -- Periodicals; Matériaux -- Périodiques; Cristaux -- Croissance -- Périodiques; Crystal growth; Materials; Periodicals; 620.11
• DOI: 10.1016/j.materresbull.2019.110624
• Languages: English
• ISSNs: 0025-5408

Abstract

Graphical abstract: Highlights: Any ptterns can be fabricated in the desired area as a thin film by applying a spin coating. This is not only a unique patterning method but also inexpensive and simple method. The mechanism of self-patterning by taping was examined by analytical methods (OM, contact angle, AFM, XPS, EPMA). The ZTO TFTs patterned using this method exhibited better electrical properties to those of spin-coated ZTO TFTs. Abstract: This paper reports a novel method for patterning an active layer by simple taping and spin coating without lithography equipment for solution-processed oxide thin-film transistors (TFTs) fabrication. A solution-processed self-patterned thin film could be prepared on the non-taped area by pushing the solution out from the taped area because the surface properties of SiO2 had been changed from hydrophilic to hydrophobic through the application of a polyimide (PI) tape. The electrical properties of the self-patterned ZTO TFTs proved better than those of the spin-coated TFTs, showing a saturation mobility of 2.64 cm 2 /V s, a threshold voltage of 0 V, an on-to-off current ratio of 1.55 × 10 7, and a subthreshold slope of 0.5 V/dec after 400 °C annealing with improved contact characteristics and bias stress stability.