Anisotropic Landau level splitting and Lifshitz transition induced magnetoresistance enhancement in ZrTe5 crystals. (10th September 2019)

• Record Type: Journal Article
• Authors: Zhou, L; Ramiere, A; Chen, P B; Tang, J Y; Wu, Y H; Lei, X; Guo, G P; He, J Q; He, H T
• Is Part Of: New journal of physics. Volume 21:Number 9(2019:Sep.)
• Publication Date: 2019-09-10
• Subjects: anisotropic landau level splitting -- lifshitz transition -- two-carrier transport; Physics -- Periodicals; Physics; Periodicals; 530.05
• DOI: 10.1088/1367-2630/ab3dbb
• Languages: English
• ISSNs: 1367-2630

Abstract

Abstract: Magneto-transport study has been performed in ZrTe5 single crystals. The observed Shubnikov–de Hass quantum oscillation at low temperature clearly demonstrates the existence of a nontrivial band with small effective mass in ZrTe5 . Furthermore, we also revealed the highly anisotropic nature of high-field Landau level splitting in ZrTe5, suggesting the dominant role of orbital contribution to the splitting. Besides these, an abnormal large enhancement of magnetoresistance appears at high temperatures, which is believed to arise from the Lifshitz transition induced two-carrier transport in ZrTe5 . Our study provides more understanding of the physical properties of ZrTe5 and sheds light on potential application of ZrTe5 in spintronics.