Charge-density-wave tuning in monolayer 1H-TaSe2by biaxial strain and charge doping. (4th September 2019)

• Record Type: Journal Article
• Authors: Si, J. G.; Wei, M. J.; Wu, H. Y.; Xiao, R. C.; Lu, W. J.
• Is Part Of: Europhysics letters. Volume 127:Number 3(2019)
• Publication Date: 2019-09-04
• Subjects: 74.78.Na -- 71.45.Lr -- 74.62.Dh; Physics -- Periodicals; Electronic journals; 530.05
• DOI: 10.1209/0295-5075/127/37001
• Languages: English
• ISSNs: 0295-5075

Abstract

Abstract: Using first-principles calculations, we investigate the effects of in-plane biaxial strain and charge doping on the charge-density-wave (CDW) order of monolayer 1 H -TaSe2 . Our results show that the compressive strain can enhance the CDW order, while the tensile strain suppresses the CDW order of monolayer 1 H -TaSe2 . The contrary results of strain-tuned CDW orders in 1 H -TaSe2 and 1 T -TiSe2 are explained based on the different lattice distortions and responses to strain. Furthermore, we find that the electron doping can enhance the CDW order, while the hole doping suppresses the CDW order. Our results show that the strain and charge doping can effectively control the CDW order of monolayer 1 H -TaSe2, which makes monolayer 1 H -TaSe2 a candidate material for a two-dimensional CDW electronic device. Further experimental investigations are needed to confirm the present predictions.