Epitaxial GaN films with ultralow threading dislocation densities grown on an SiO2-masked patterned sapphire substrate. (5th September 2019)

• Record Type: Journal Article
• Authors: Xing, Kun; Wang, Jiangtao; Wang, Liancheng; Tao, Xiao; Chen, Shirong; Liang, Huaguo
• Is Part Of: Applied physics express. Volume 12:Number 10(2019)
• Publication Date: 2019-09-05
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/1882-0786/ab3e88
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: This letter reports on epitaxial GaN layers with ultralow threading dislocation (TD) densities grown by metal organic chemical vapor deposition on SiO2 -masked patterned sapphire substrates (SMPSSs). The patterning employs periodic micro-scale SiO2 cone-shaped features on thin sapphire pedestals surrounded by flat c -plane sapphire substrate surfaces. Cross-sectional transmission electron microscopy results demonstrate that GaN films grown on SMPSSs provide an ultralow TD density of 8.5 × 10 6 cm −2 . A GaN LED structure grown on SMPSS-based GaN film provides an optical output power that is 130% greater than that obtained for an equivalent LED structure grown on a standard PSS-based GaN film.