A study of the radiation tolerance of poly-crystalline and single-crystalline CVD diamond to 800 MeV and 24 GeV protons. (30th August 2019)

• Record Type: Journal Article
• Authors: Bäni, L; Alexopoulos, A; Artuso, M; Bachmair, F; Bartosik, M; Beck, H; Bellini, V; Belyaev, V; Bentele, B; Bes, A; Brom, J-M; Bruzzi, M; Chiodini, G; Chren, D; Cindro, V; Claus, G; Collot, J; Cumalat, J; Dabrowski, A; D'Alessandro, R; Dauvergne, D; de Boer, W; Dick, S; Dorfer, C; Dünser, M; Eremin, V; Forcolin, G; Forneris, J; Gallin-Martel, L; Gallin-Martel, M-L; Gan, K K; Gastal, M; Giroletti, C; Goffe, M; Goldstein, J; Golubev, A; Gorišek, A; Grigoriev, E; Grosse-Knetter, J; Grummer, A; Gui, B; Guthoff, M; Hiti, B; Hits, D; Hoeferkamp, M; Hofmann, T; Hosselet, J; Hostachy, J-Y; Hügging, F; Hutton, C; Janssen, J; Kagan, H; Kanxheri, K; Kasieczka, G; Kass, R; Kis, M; Kramberger, G; Kuleshov, S; Lacoste, A; Lagomarsino, S; Lo Giudice, A; Paz, I Lopez; Lukosi, E; Maazouzi, C; Mandic, I; Mathieu, C; Menichelli, M; Mikuž, M; Morozzi, A; Moss, J; Mountain, R; Oh, A; Olivero, P; Passeri, D; Pernegger, H; Perrino, R; Piccini, M; Picollo, F; Pomorski, M; Potenza, R; Quadt, A; Rarbi, F; Re, A; Reichmann, M; Roe, S; Becerra, D A Sanz; Scaringella, M; Schaffner, D; Schmidt, C J; Schnetzer, S; Schioppa, E; Sciortino, S; Scorzoni, A; Seidel, S; Servoli, L; Smith, D S; Sopko, B; Sopko, V; Spagnolo, S; Spanier, S; Stenson, K; Stone, R; Sutera, C; Traeger, M; Trischuk, W; Truccato, M; Tuve, C; Velthuis, J; Venturi, N; Wagner, S; Wallny, R; Wang, J C; Weingarten, J; Weiss, C; Wengler, T; Wermes, N; Yamouni, M; Zavrtanik, M;
• Other Names: collab.
• Is Part Of: Journal of physics. Volume 52:Number 46(2019)
• Publication Date: 2019-08-30
• Subjects: chemical vapor deposition -- single crystal diamond -- polycrystalline diamond -- charge collection distance -- mean drift path -- radiation tolerance -- radiation damage constant; Physics -- Periodicals; 530
• DOI: 10.1088/1361-6463/ab37c6
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: We have measured the radiation tolerance of poly-crystalline and single-crystalline diamonds grown by the chemical vapor deposition (CVD) process by measuring the charge collected before and after irradiation in a 50 m pitch strip detector fabricated on each diamond sample. We irradiated one group of sensors with 800 MeV protons, and a second group of sensors with 24 GeV protons, in steps, to protons cm −2 and protons cm −2 respectively. We observe the sum of mean drift paths for electrons and holes for both poly-crystalline CVD diamond and single-crystalline CVD diamond decreases with irradiation fluence from its initial value according to a simple damage curve characterized by a damage constant for each irradiation energy and the irradiation fluence. We find for each irradiation energy the damage constant, for poly-crystalline CVD diamond to be the same within statistical errors as the damage constant for single-crystalline CVD diamond. We find the damage constant for diamond irradiated with 24 GeV protons to be and the damage constant for diamond irradiated with 800 MeV protons to be . Moreover, we observe the pulse height decreases with fluence for poly-crystalline CVD material and within statistical errors does not change with fluence for single-crystalline CVD material for both 24 GeV proton irradiation and 800 MeV proton irradiation. Finally, we have measured the uniformity of each sample as a function of fluence and observed that for poly-crystalline CVD diamond the samples become more uniform with fluence while for single-crystalline CVD diamond the uniformity does not change with fluence.