Copper nanostructures into pores of SiO2/Si template: galvanic displacement, chemical and structural characterization. (28th August 2019)

• Record Type: Journal Article
• Authors: Yakimchuk, D V; Khubezhov, S A; Bundyukova, V D; Kozlovskiy, A L; Zdorovets, M V; Shlimas, D I; Tishkevich, D I; Kaniukov, E Yu
• Is Part Of: Materials research express. Volume 6:Number 10(2019)
• Publication Date: 2019-08-28
• Subjects: template synthesis -- copper nanostructures -- XPS -- galvanic displacement; Materials science -- Research -- Periodicals; Materials science -- Periodicals; 620.11
• DOI: 10.1088/2053-1591/ab3b8b
• Languages: English
• ISSNs: 2053-1591

Abstract

Abstract: Due to the low cost and plasmonic properties existence in the visible range of wavelengths, copper nanostructures are of great interest for Surface-enhanced Raman spectroscopy. In this paper we propose a method for synthesizing copper nanostructures by galvanic displacement into the pores of the ion-track SiO2 /Si template. The copper deposit morphology grown in a limited volume of SiO2 pores on silicon is studied. The results of electron diffraction indicate that copper deposit contains oxides phases CuO and Cu2 O. By using of x-ray photoelectron spectroscopy, chemical composition and elements bonds of SiO2 (Cu)/Si system are studied in detail. The possibility of using such structures for Surface-enhanced Raman spectroscopy is discussed.