Interfacial Effects of UV-Ozone Treated Sol-Gel Processable ZnO for Hybrid Photodetectors and Thin Film Transistors. (2019)

• Record Type: Journal Article
• Authors: Pickett, Alec; Mohapatra, Aiswarya A.; Ray, Suman; Robledo, Christopher; Ghosh, Kartik; Patil, Satish; Guha, Suchismita
• Is Part Of: MRS advances. Volume 4:Number 31/32(2019)
• Page Start: 1793
• Page End: 1800
• Publication Date: 2019
• Subjects: organic, -- II-VI, -- interface, -- devices, -- sol-gel; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/adv.2019.298
• Languages: English
• ISSNs: 2059-8521

Abstract

ABSTRACT: Hybrid organic-inorganic semiconducting interfaces have attracted attention in photodiodes and field-effect transistors (FETs) due to the realization of intrinsic p-n junctions and their mechanical flexibility. With the difficulty of developing high-mobility n-type organic semiconductors due to the necessity of low LUMO levels and ambient environment stability, solution processable inorganic materials are an excellent alternative. ZnO is an intrinsic n-type semiconductor which is non-toxic and sol-gel processable, creating avenues for film patterning and fully solution processed devices. We report the improvement of electron mobilities in ZnO FETs through simple UV-Ozone processing which reduces lattice defects within the film and at the SiO2 /ZnO interface. Treated ZnO films yield electron mobilities close to 10 -2 cm 2 /Vs and on/off current ratios of 10 4 while non-treated films have mobilities on the order of 10 -5 cm 2 /Vs and an order of magnitude lower on/off current ratios. Treated films also yield improved photoresponsivity and detectivity in hybrid ZnO-organic photodetectors.